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STGFW80V60F 数据表(PDF) 7 Page - STMicroelectronics

部件名 STGFW80V60F
功能描述  Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGFW80V60F 数据表(HTML) 7 Page - STMicroelectronics

Back Button STGFW80V60F Datasheet HTML 3Page - STMicroelectronics STGFW80V60F Datasheet HTML 4Page - STMicroelectronics STGFW80V60F Datasheet HTML 5Page - STMicroelectronics STGFW80V60F Datasheet HTML 6Page - STMicroelectronics STGFW80V60F Datasheet HTML 7Page - STMicroelectronics STGFW80V60F Datasheet HTML 8Page - STMicroelectronics STGFW80V60F Datasheet HTML 9Page - STMicroelectronics STGFW80V60F Datasheet HTML 10Page - STMicroelectronics STGFW80V60F Datasheet HTML 11Page - STMicroelectronics Next Button
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DocID026386 Rev 1
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STGFW80V60F, STGW80V60F, STGWT80V60F
Electrical characteristics
Figure 8. VCE(sat) vs. junction temperature
Figure 9. VCE(sat) vs. collector current
Figure 10. Collector current vs. switching
frequency for TO-247 and TO-3P
Figure 11. Collector current vs. switching
frequency for TO-3PF
Figure 12. Forward bias safe operating area for
TO-247 and TO-3P
Figure 13. Forward bias safe operating area for
TO-3PF
VCE(sat)
3
2.5
2
1.5
-50
TJ(°C)
(V)
100
3.5
0
50
150
VGE= 15V
IC= 160A
IC= 80A
IC= 40A
1
GIPD041120131129FSR
VCE(sat)
2.5
2
1.5
20
IC(A)
(V)
80
3
40
60
3.5
100
1
VGE= 15V
TJ= -40°C
TJ= 25°C
TJ= 175°C
120
140
GIPD041120131136FSR
0
40
80
120
160
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC = 400V, R =10
,
V
GE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
GIPD041120131144FSR
IC
100
10
1
1
VCE(V)
(A)
10
10 μs
100 μs
1 ms
Single pulse
Tc= 25°C, TJ<= 175°C
VGE= 15V
100
GIPD041120131152FSR



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