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STGFW80V60F 数据表(PDF) 7 Page - STMicroelectronics |
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STGFW80V60F 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 19 page ![]() DocID026386 Rev 1 7/19 STGFW80V60F, STGW80V60F, STGWT80V60F Electrical characteristics Figure 8. VCE(sat) vs. junction temperature Figure 9. VCE(sat) vs. collector current Figure 10. Collector current vs. switching frequency for TO-247 and TO-3P Figure 11. Collector current vs. switching frequency for TO-3PF Figure 12. Forward bias safe operating area for TO-247 and TO-3P Figure 13. Forward bias safe operating area for TO-3PF VCE(sat) 3 2.5 2 1.5 -50 TJ(°C) (V) 100 3.5 0 50 150 VGE= 15V IC= 160A IC= 80A IC= 40A 1 GIPD041120131129FSR VCE(sat) 2.5 2 1.5 20 IC(A) (V) 80 3 40 60 3.5 100 1 VGE= 15V TJ= -40°C TJ= 25°C TJ= 175°C 120 140 GIPD041120131136FSR 0 40 80 120 160 110 Ic [A] f [kHz] G Ω rectangular current shape, (duty cycle=0.5, V CC = 400V, R =10 , V GE = 0/15 V, TJ =175°C) Tc=80°C Tc=100 °C GIPD041120131144FSR IC 100 10 1 1 VCE(V) (A) 10 10 μs 100 μs 1 ms Single pulse Tc= 25°C, TJ<= 175°C VGE= 15V 100 GIPD041120131152FSR |
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