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STGFW80V60F 数据表(PDF) 1 Page - STMicroelectronics |
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STGFW80V60F 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 19 page ![]() This is information on a product in full production. May 2014 DocID026386 Rev 1 1/19 19 STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Figure 1. Internal schematic diagram Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2 or TAB) G (1) E (3) TO-247 1 2 3 TO-3P 1 2 3 TAB 111 1 2 3 TO-3PF Table 1. Device summary Order code Marking Package Packaging STGFW80V60F GFW80V60F TO-3PF Tube STGW80V60F GW80V60F TO-247 Tube STGWT80V60F GWT80V60F TO-3P Tube www.st.com |
类似零件编号 - STGFW80V60F |
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类似说明 - STGFW80V60F |
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