STGW60H65DFB datasheet(1/19 Pages) STMICROELECTRONICS

部件名	STGW60H65DFB

功能描述	Low thermal resistance

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 19 page

This is information on a product in full production.

April 2015

DocID024365 Rev 7

1/19

19

STGW60H65DFB, STGWA60H65DFB

STGWT60H65DFB

Trench gate field-stop IGBT, HB series

650 V, 60 A high speed

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High frequency converters

Description

These are IGBT devices developed using an

advanced proprietary trench gate and field-stop

structure. The devices are part of the new HB

series of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

G (1)

E (3)

C (2, TAB)

TO-247

1

2

3

TO-3P

1

2

3

TAB

TO-247 long leads

Table 1. Device summary

Order code

Marking

Package

Packing

STGW60H65DFB

GW60H65DFB

TO-247

Tube

STGWA60H65DFB

G60H65DFB

TO-247 long leads

Tube

STGWT60H65DFB

GWT60H65DFB

TO-3P

Tube

www.st.com

类似零件编号 - STGW60H65DFB

制造商	部件名	数据表	功能描述
STMicroelectronics	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019
	STGW60H65DFB-4	556Kb / 15P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 20-Jun-2019
	STGW60H65DFB	689Kb / 21P	Trench gate field-stop 650 V, 60 A high speed HB series IGBT 22-Jul-2019

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