November 2016

DocID024366 Rev 8

1/18

This is information on a product in full production.

www.st.com

STGW80H65DFB,

STGWT80H65DFB

Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features





High speed switching series



Minimized tail current





Safe paralleling



Tight parameter distribution



Low thermal resistance



Very fast soft recovery antiparallel diode

Applications



Photovoltaic inverters



High frequency converters

Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the new HB

series of IGBTs, which represent an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

parameter distribution result in safer paralleling

operation.

Table 1: Device summary

Order code

Marking

Package

Packing

STGW80H65DFB

GW80H65DFB

TO-247

Tube

STGWT80H65DFB

GWT80H65DFB

TO-3P

Tube

1

2

3

TO-3P

TAB

TO-247

1

2

3