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STPS40150CG 数据表(PDF) 2 Page - STMicroelectronics |
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STPS40150CG 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() STPS40150CT/CW/CG 2/6 Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C VR =VRRM 28 µA Tj = 125°C 211 mA VF * Forward voltage drop Tj = 25 °CIF =20 A 0.92 V Tj = 125°C IF =20 A 0.69 0.75 Tj = 25 °CIF =40 A 1.00 Tj = 125°C IF =40 A 0.79 0.86 Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P = 0.64 x IF(AV) + 0.0055 IF 2 (RMS) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB / D 2PAK Per diode Total 1.2 0.85 °C/W Rth(j-c) Junction to case TO-247 Per diode Total 1.2 0.85 °C/W Rth(c) Coupling 0.5 °C/W THERMAL RESISTANCES When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) P(W) F(AV) 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 I(A) F(AV) T δ=tp/T tp δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 Fig. 1: Conduction losses versus average current (per diode). 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM Fig. 2: Normalized avalanche power derating versus pulse duration. |
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