STPS40150CG datasheet(3/6 Pages) STMICROELECTRONICS

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STPS40150CT/CW/CG

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0.2

0.4

0.6

0.8

1.2

100

125

150

T(°C)

P(t )

(25°C)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus junction temperature.

100

125

150

175

I(A)

F(AV)

(°C)

amb

δ=tp/T

R=R

th(j-a)

th(j-c)

=15°C/W

th(j-a)

Fig. 4: Average forward current versus ambient

temperature (

δ=0.5, per diode).

100

150

200

250

1.E-03

1.E-02

1.E-01

1.E+00

I(A)

δ=0.5

t(s)

T =50°C

T =75°C

T =125°C

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

t(s)

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

110

130

150

I (µA)

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

1000

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

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