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LNBH29 数据表(PDF) 13 Page - STMicroelectronics |
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LNBH29 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 31 page ![]() DocID023065 Rev 3 13/31 LNBH29 Typical application circuits Table 5. Typical application circuit bill of material Component Notes R1 (RSEL) SMD resistor. Refer to IMAX current limit selection resistor values (Table 9). C1 > 25 V electrolytic capacitor, 100 µF or higher is suitable. or > 25 V ceramic capacitor, 10 µF or higher is suitable. C2 With COMP=0, > 25 V electrolytic capacitor, 100 µF or higher is suitable. or With COMP=1, > 35 V ceramic capacitor, 22 µF (or 2 x 10 µF) or higher is suitable. C3 From 470 nF to 2.2 µF ceramic capacitor. Higher values allow lower DC-DC noise. C5 From 100 nF to 220 nF ceramic capacitor. Higher values allow lower DC-DC noise. C4, C6 220 nF ceramic capacitors. C7 100 nF or higher is suitable. D1 STPS130A or similar Schottky diode. D3 BAT54, BAT43, 1N5818, or any low power Schottky diode with IF(AV) > 0.2 A, VRRM > 25 V, VF < 0.5 V. To be placed as close as possible to VOUT pin. D2 1N4001-07, S1A-S1M, or any similar general purpose rectifier. L1 With COMP=0, use 10 µH inductor with Isat>Ipeak where Ipeak is the boost converter peak current. or With COMP=1 and C2 = 22 µF, use 6.8 µH inductor with Isat>Ipeak where Ipeak is the boost converter peak current. |
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