August 2014

DocID026785 Rev 1

1/13

STL19N60DM2

N-channel 600 V, 0.280

Ω typ., 11 A MDmesh™ DM2 with fast diode

Power MOSFET in a PowerFLAT™ 8x8 HV package

Datasheet

Figure 1. Internal schematic diagram

Features

• Fast-recovery body diode

• Extremely low gate charge and input

capacitance

• 100% avalanche tested

• Extremely high dv/dt ruggedness

• Zener-protected

Applications

• Switching applications

Description

This high voltage N-channel Power MOSFET is

part of the MDmesh DM2 fast recovery diode

series. It offers very low recovery charge and time

suitable for the most demanding high efficiency

converters and ideal for bridge topologies and

ZVS phase-shift converters.

D(3)

G(1)

S(2)

AM01476v6

Order code

STL19N60DM2

650 V

0.320

Ω

11 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STL19N60DM2

19N60DM2

PowerFLAT™ 8x8 HV

Tape and reel

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