DocID026785 Rev 1

5/13

STL19N60DM2

Electrical characteristics

13

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Turn-on delay time

(see Figure 2 and 7)

-

TBD

-

ns

Voltage rise time

-

TBD

-

ns

Turn-off delay time

-

TBD

-

ns

Current fall time

-

TBD

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

(1)

1.

Source-drain current

-

11

A

(1),(2)

2.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

44

A

(3)

3.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.5

V

(4)

4.

Typical values are referring to the test conditions of the same die housed in through hole package.

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.

Reverse recovery time

-120

ns

(4)

Reverse recovery charge

-

TBD

µC

(4)

Reverse recovery current

-

TBD

A

(4)

Reverse recovery time

(see Figure 4)

-TBD

ns

(4)

Reverse recovery charge

-

TBD

µC

(4)

Reverse recovery current

-

TBD

A