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STL62P3LLH6 数据表(PDF) 7 Page - STMicroelectronics

部件名 STL62P3LLH6
功能描述  P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package
PDF  16 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL62P3LLH6 数据表(HTML) 7 Page - STMicroelectronics

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STL62P3LLH6
Electrical characteristics
DocID025836 Rev 6
7/16
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage vs
temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
GIPG030920141408MT
VGS
6
4
2
0
0
40
Qg(nC)
(V)
8
60
10
VDD=15V
ID=14A
12
20
GIPG020920141051MT
RDS(on)
8.70
8.60
8.50
0
4
ID(A)
(mΩ)
2
6
8.80
VGS=10V
8
10
8.90
9.00
9.10
14
12
9.20
9.30
9.40
GIPG020920141145MT
VGS(th)
0.7
0.5
0.4
-75
TJ(°C)
(norm)
1.1
75
25
ID=250µ A
-25
125
175
0.6
0.8
0.9
1
GIPG020920141154MT
RDS(on)
0.8
0.4
-75
25
TJ(°C)
(norm)
-25
75
125
0.6
1
1.2
1.4
VGS=10V
1.6
175
GIPG020920141202MT
V(BR)DSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.92
0.94
1.02
ID=1m A
1.04
1.08
175
0.96
0.98
1
1.06



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