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STL62P3LLH6 数据表(PDF) 5 Page - STMicroelectronics |
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STL62P3LLH6 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STL62P3LLH6 Electrical characteristics DocID025836 Rev 6 5/16 Table 8: Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD(1) Forward on voltage ISD = -7 A, VGS = 0 V - -1.1 V trr Reverse recovery time ISD = -24 A, di/dt = 100 A/µs VDD = -16 V, Tj=150 °C (see Figure 15: "Source-drain diode forward characteristics" ) - 25.2 ns Qrr Reverse recovery charge - 17.4 nC IRRM Reverse recovery current - 1.4 A Notes: (1)Pulsed: pulse duration = 300 µs, duty cycle 1.5% |
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