Characteristics

STPS40L45C

2/11

DocID6857 Rev 5

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

Table 2. Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

45

V

Forward rms current

30

A

Average forward current

 = 0.5

Per diode

Per device

20

40

A

Surge non repetitive forward current

220

A

Repetitive peak reverse current

2

A

Non repetitive peak reverse current

3

A

Repetitive peak avalanche power

8100

W

Storage temperature range

-65 to + 150

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 3. Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.5

0.8

°C/W

Coupling

0.1

°C/W

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

1.

To evaluate the conduction losses use the following equation:

2

(RMS)

Reverse leakage current

0.6

mA

140

280

mA

(1.)

Forward voltage drop

0.53

V

0.42

0.49

0.69

0.6

0.7

dPtot

dTj

---------------

1

Rth j

a

–



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