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STPS40L45CT 数据表(PDF) 4 Page - STMicroelectronics |
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STPS40L45CT 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 11 page ![]() Characteristics STPS40L45C 4/11 DocID6857 Rev 5 Figure 7. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 8. Junction capacitance versus reverse voltage applied (typical values, per diode) 0 5 10 15 20 25 30 35 40 45 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 VR(V) IR(mA) Tj=125°C Tj=75°C Tj=25°C Tj=150°C 1 10 100 0.1 1.0 10.0 C(nF) F=1MHz Tj=25°C VR(V) Figure 9. Forward voltage drop versus forward current (maximum values, per diode) Figure 10. Thermal resistance junction to ambient versus copper surface under tab 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000 VFM(V) IFM(A) Typical values Tj=150°C Tj=125°C Tj=75°C Tj=25°C 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 Rth(j-a) (°C/W) S(Cu) (cm²) Epoxy printed circuit board FR4, copper thickness: 35 µm |
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