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STR1P2UH7 数据表(PDF) 3 Page - STMicroelectronics |
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STR1P2UH7 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() STR1P2UH7 Electrical ratings DocID025025 Rev 3 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 20 V VGS Gate-source voltage ± 8 V ID Drain current (continuous) at Tpcb = 25 °C 1.4 A ID Drain current (continuous) at Tpcb = 100 °C 0.9 A IDM(1) Drain current (pulsed) 5.6 A PTOT Total dissipation at Tpcb = 25 °C 0.35 W Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Notes: (1)Pulse width limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit Rthj-pcb(1) Thermal resistance junction-pcb max, single operation 357 °C/W Notes: (1)When mounted on 1inch² FR-4 board, 2 oz Cu For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. |
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