Electrical characteristics

STR1P2UH7

4/12

DocID025025 Rev 3

2

Electrical characteristics

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

20

V

Zero gate voltage

drain current

1

µA

Gate-body leakage

current

10

nA

Gate threshold voltage

0.4

1

V

Static drain-source on-resistance

0.087

0.1

Ω

0.11

0.13

Ω

0.145

0.18

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-

510

-

pF

Output capacitance

-

66

-

pF

Reverse transfer

capacitance

-

44

-

pF

Total gate charge

(see Figure 14: "Gate charge test

circuit")

-

4.8

-

nC

Gate-source charge

-

0.7

-

nC

Gate-drain charge

-

0.8

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay

time

(see Figure 15: "Test circuit for inductive

load switching and diode recovery times")

-

9

-

ns

Rise time

-

21

-

ns

Turn-off delay

time

-

40

-

ns

Fall time

-

19

-

ns

For the P-channel Power MOSFET the actual polarity of the voltages and the

current must be reversed.