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STS3P6F6 数据表(PDF) 7 Page - STMicroelectronics |
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STS3P6F6 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 16 page ![]() DocID024437 Rev 2 7/16 STS3P6F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics C 150 100 50 0 0 20 VDS(V) (pF) 10 30 Ciss Coss Crss 40 50 200 250 300 350 400 AM15342v1 V(BR)DSS -55 -5 TJ(°C) (norm) -30 70 20 45 95 0.90 0.95 1 1.05 1.10 1.15 ID = 1mA 120 AM15349v1 VGS(th) 0.90 0.80 0.70 0.60 -55 -5 TJ(°C) (norm) -30 1 70 20 45 95 120 1.10 ID=250 µA AM15344v1 RDS(on) 1 0.8 0.6 0.4 -55 -5 TJ(°C) -30 20 1.2 1.4 VGS=10V 45 70 95 120 1.6 1.8 2 (norm) AM15350v1 VSD 2 6 ISD(A) (V) 4 8 0.55 0.65 0.75 0.85 0.95 1.05 TJ=-55°C TJ=175°C TJ=25°C AM15345v1 |
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