Electrical characteristics

STS3P6F6

4/16

DocID024437 Rev 2

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified).

Note:

For the P-channel Power MOSFET actual polarity of voltages and current has to be

reversed.

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

60

V

Zero gate voltage

drain current

1

µA

10

µA

Gate-body leakage

current

±100

nA

2

4

V

Static drain-source

on-resistance

0.13

0.16

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-

340

-

pF

Output capacitance

-

40

-

pF

Reverse transfer

capacitance

-20

-

pF

Total gate charge

(see Figure 14)

-6.4

-

nC

Gate-source charge

-

1.7

-

nC

Gate-drain charge

-

1.7

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 13)

-64

-

ns

Rise time

-

5.3

-

ns

Turn-off delay time

-

14

-

ns

Fall time

-

3.7

-

ns