This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

December 2014

DocID024614 Rev 2

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15

STS5P3LLH6

P-channel 30 V, 0.048

Ω typ., 5 A STripFET™ H6 DeepGATE™

Power MOSFET in an SO-8 package

Datasheet

Figure 1. Internal schematic diagram

Features

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

Applications

• Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

packages.

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed.

SO-8

Order code

STS5P3LLH6

30 V

0.056

Ω at 10 V 5 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STS5P3LLH6

5K3L

SO-8

Tape and reel

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