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STS5P3LLH6 数据表(PDF) 3 Page - STMicroelectronics |
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STS5P3LLH6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() DocID024614 Rev 2 3/15 STS5P3LLH6 Electrical ratings 1 Electrical ratings Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at Tamb = 25 °C 5 A ID Drain current (continuous) at Tamb = 100 °C 3.2 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 20 A PTOT Total dissipation at Tamb = 25 °C 2.7 W TJ Operating junction temperature 150 °C Tstg Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-amb (1) 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec Thermal resistance junction-amb 47 °C/W |
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