STS13N3LLH5 datasheet(4/12 Pages) STMICROELECTRONICS

4 / 12 page

Electrical characteristics

STS13N3LLH5

4/12

Doc ID 018965 Rev 1

Electrical characteristics

(TCASE=25 °C unless otherwise specified).

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS = 0)

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS =max rating

TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = + 22 / - 20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 6.5 A

VGS= 4.5 V, ID= 6.5 A

0.006

0.0052

0.0066

0.0091

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

1500

295

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 13A

VGS= 4.5 V

(see Figure 14)

4.7

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=15 V, ID= 6.5 A,

RG=4.7 Ω, VGS =10 V

(see Figure 13)

9.3

14.5

22.7

4.5

STS13N3LLH5 数据表(PDF) 4 Page - STMicroelectronics

STS13N3LLH5 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

STS13N3LLH5 数据表(PDF) 4 Page - STMicroelectronics

STS13N3LLH5 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载