STS13N3LLH5 datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STS13N3LLH5

功能描述	High avalanche ruggedness

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 12 page

June 2011

Doc ID 018965 Rev 1

1/12

12

STS13N3LLH5

N-channel 30 V, 0.006

Ω , 13 A, SO-8

STripFET™ V Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Applications

■ Switching applications

Description

This product is an N-channel Power MOSFET that

utilizes the 5th generation of design rules for ST’s

proprietary STripFET™ technology. The lowest

available RDS(on)* Qg, in SO-8 package, makes

this device suitable for the most demanding DC-

DC converter applications, where high power

density is to be achieved.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

ID

STS13N3LLH5

30 V

<0.0066

Ω 13 A (1)

1.

The value is rated according to Rthj-pcb.

SO-8

1

4

5

8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS13N3LLH5

13D3L

SO-8

Tape and reel

www.st.com

类似零件编号 - STS13N3LLH5

制造商	部件名	数据表	功能描述
SHENZHEN DOINGTER SEMIC...	STS13N3LLH5	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

More results

类似说明 - STS13N3LLH5

制造商	部件名	数据表	功能描述
STMicroelectronics	STH290N4F6-2AG	486Kb / 19P	High avalanche ruggedness 03-Jul-2015
	STL220N6F7	744Kb / 13P	High avalanche ruggedness 22-Sep-2014
	STS7P4LLF6	396Kb / 13P	High avalanche ruggedness 10-Mar-2015
	STH170N8F7-2	823Kb / 15P	High avalanche ruggedness 20-Feb-2015
	STL86N3LLH6AG	1,009Kb / 16P	High avalanche ruggedness February 2015 Rev 3
	STP220N6F7	561Kb / 13P	High avalanche ruggedness 07-Oct-2015
	STL4P3LLH6	766Kb / 13P	High avalanche ruggedness 09-Dec-2014
	STL8N6F7	893Kb / 12P	High avalanche ruggedness 27-Aug-2015
	STL30P3LLH6	1Mb / 15P	High avalanche ruggedness 08-Jan-2014
	STS30N3LLH6	776Kb / 13P	High avalanche ruggedness July 2009 Rev 2