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STTH20LCD06C 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH20LCD06C
功能描述  low reverse current
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH20LCD06C 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH20LCD06C
2/10
Doc ID 15898 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.04 x IF
2
(RMS)
Table 2.
Absolute ratings(1)
1.
Limiting values per diode at 25 °C, unless otherwise specified
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS) Forward current rms
30
A
IF(AV)
Average forward
current,
δ = 0.5
Tc = 105 °C
TO-220AB,
D2PAK
Per diode
10
A
Per device
20
A
Tc = 60 °C
TO-220FPAB
Per diode
10
A
Per device
20
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
80
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(2)
2.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB, D2PAK
3.5
°C/W
TO-220FPAB
5.8
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2 %
Reverse leakage
current
Tj = 25 °C
VR = VRRM
--
1
µA
Tj = 150 °C
-
10
100
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
Tj = 25 °C
IF = 10 A
--
2
V
Tj = 150 °C
-
1.25
1.6
Tj = 25 °C
IF = 20 A
-
-
2.35
Tj = 150 °C
-
1.55
2
dPtot
dTj
<
1
Rth(j-a)



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