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STTH20LCD06C 数据表(PDF) 4 Page - STMicroelectronics |
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STTH20LCD06C 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Characteristics STTH20LCD06C 4/10 Doc ID 15898 Rev 2 Figure 5. Peak reverse recovery current versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery time versus dIF/dt (typical values, per diode) 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 IRM(A) IF = IF(AV) VR = 400 V Tj = 125 °C dIF/dt (A/µs) 0 20 40 60 80 100 120 140 160 180 200 220 240 0 50 100 150 200 250 300 350 400 450 500 tRR (ns) IF = IF(AV) VR = 400 V Tj = 125 °C dIF/dt (A/µs) Figure 7. Reverse recovery charges versus dIF/dt (typical values, per diode) Figure 8. Reverse recovery softness factor versus dIF/dt (typical values, per diode) 0 50 100 150 200 250 300 350 400 450 500 550 0 50 100 150 200 250 300 350 400 450 500 QRR (nC) IF = IF(AV) VR = 400 V Tj = 125 °C dIF/dt (A/µs) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 50 100 150 200 250 300 350 400 450 500 SFACTOR dIF/dt (A/µs) IF = IF(AV) VR = 400 V Tj = 125 °C Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Transient peak forward voltage versus dIF/dt (typical values, per diode) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 IF = IF(AV) VR = 400 V Refernce Tj = 125 °C Tj (°C) IRM SFACTOR QRR 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 400 450 500 VFP(V) dIF/dt (A/µs) IF = IF(AV) Tj = 125 °C |
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