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STTH60W03C 数据表(PDF) 2 Page - STMicroelectronics |
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STTH60W03C 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STTH60W03C 2/8 Doc ID 023144 Rev 1 1 Characteristics When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) To evaluate the conduction losses use the following equation: P = 0.85 x IF(AV) + 0.01 IF 2 (RMS) Table 2. Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current, δ = 0.5 Tc = 110 °C Per diode 30 A Tc = 95 °C Per device 60 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 280 A Tstg Storage temperature range -65 to + 175 ° C Tj Maximum operating junction temperature + 175 ° C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case Per diode 1.5 °C / W Total 0.9 °C / W Rth(c) Coupling 0.3 °C / W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR = VRRM 20 µA Tj = 125° C 20 200 VF (2) 2. Pulse test: tp = 380 µs, δ < 2% Forward voltage drop Tj = 25° C IF = 30 A 1.45 V Tj = 150 °C 0.94 1.15 Tj = 25° C IF = 60 A 1.7 Tj = 150° C 1.18 1.45 |
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