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STTH60W03C 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH60W03C
功能描述  Low reverse recovery current
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH60W03C 数据表(HTML) 2 Page - STMicroelectronics

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Characteristics
STTH60W03C
2/8
Doc ID 023144 Rev 1
1
Characteristics
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.01 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS) RMS forward current
50
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 110 °C
Per diode
30
A
Tc = 95 °C
Per device
60
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
280
A
Tstg
Storage temperature range
-65 to + 175
° C
Tj
Maximum operating junction temperature
+ 175
° C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
1.5
°C / W
Total
0.9
°C / W
Rth(c)
Coupling
0.3
°C / W
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms,
δ < 2%
Reverse leakage current
Tj = 25 °C
VR = VRRM
20
µA
Tj = 125° C
20
200
VF
(2)
2.
Pulse test: tp = 380 µs,
δ < 2%
Forward voltage drop
Tj = 25° C
IF = 30 A
1.45
V
Tj = 150 °C
0.94
1.15
Tj = 25° C
IF = 60 A
1.7
Tj = 150° C
1.18
1.45



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