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STTH60W03C 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH60W03C
功能描述  Low reverse recovery current
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH60W03C 数据表(HTML) 3 Page - STMicroelectronics

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STTH60W03C
Characteristics
Doc ID 023144 Rev 1
3/8
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IRM
Reverse recovery current
Tj = 125 °C
IF = 30 A, VR = 200 V
dIF/dt = -200 A/µs
79
A
QRR
Reverse recovery charge
180
nC
Sfactor
Softness factor
0.3
trr
Reverse recovery time
Tj = 25 °C
IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs
25
35
ns
tfr
Forward recovery time
Tj = 25 °C
IF = 30 A, VFR = 1.5 V
dIF/dt = 200 A/µs
180
ns
VFP
Forward recovery voltage
2.0
3.0
V
Figure 1.
Average forward power dissipation
versus average forward current
(per diode)
Figure 2.
Forward voltage drop versus
forward current (per diode)
P
F(AV)(W)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
δ05
= 0.
δ1
= 0.
δ = 0.2
δ = 0.5
δ = 1
IF(AV)(A)
= tp/T
tp
T
δ
0.1
1.0
10.0
100.0
1000.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I
FM(A)
Tj = 150 °C
(Maximum values)
Tj = 150 °C
(Typical values)
Tj = 25 °C
(Maximum values)
VFM(V)
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
Zth(j-c)/Rth(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
tp(s)
IRM(A)
0
2
4
6
8
10
12
14
16
0
50
100
150
200
250
300
350
400
450
500
IF
F(AV)
V = 200 V
T = 125 °C
R
j
= I
dIF/dt(A/µs)



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