L7987L datasheet(9/41 Pages) STMICROELECTRONICS

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L7987L

Electrical characteristics

Enable

VEN

Device OFF level

0.06

0.30

Device ON level

0.35

0.90

Soft-start

TSSSETUP Soft start setup time

Delay from UVLO rising to switching

activity

(3)

640

µs

ISS CH

CSS charging current

VSS = GND

4.3

5.0

5.7

µA

Error amplifier

VFB

Voltage feedback

0.792 0.800 0.808

VFB

Voltage feedback

(1) 0.788 0.800 0.812

VCOMPH

VFB = GND; VSS = 3.2 V

3.2

3.35

3.5

VCOMPL

VFB = 1 V; VSS = 3.2 V

0.1

IFB

FB biasing current

VFB = 3.6 V

IOSOURCE

VFB = GND; SS pin floating; VCOMP = 2 V (3)

3.1

IOSINK

Output stage sinking

capability

Unity gain buffer configuration (FB

connected to COMP).COMP voltage

variation due to IOSINK injection lower

than ± 0.1

· VFB.

(3)

5mA

AV0

Error amplifier gain

(3)

100

GBWP

Unity gain buffer configuration (FB

connected to COMP). No load on COMP

pin.

(3)

MHz

Synchronization (fan out: 5 slave devices max.)

fSYN MIN Synchronization frequency

FSW floating

280

kHz

VSYNOUT Master output amplitude

ILOAD = 4 mA

2.45

ILOAD = 0 A; pin SYNCH floating

3.8

VSYNOW Output pulse width

ILOAD = 0 A; pin SYNCH floating

155

225

275

VSYNIH

SYNCH slave high level

input threshold

2.0

VSYNIL

SYNCH slave low level input

threshold

1.0

ISYN

Slave SYNCH pull-down

current

VSYNCH = 5 V

400

650

900

µA

VSYNIW Input pulse width

200

PGOOD

VPGDTH PGOOD rising threshold

VFB rising

0.67

0.70

0.73

VPGDHYST PGOOD hysteresis

VFB falling

(3)

Table 5. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

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