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L7987L 数据表(PDF) 10 Page - STMicroelectronics |
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L7987L 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 41 page ![]() Electrical characteristics L7987L 10/41 DocID026362 Rev 3 VPGDLOW PGOOD low level IPGD = 1 mA, VFB = GND 30 mV IPGDLKG PGOOD leakage current VPGOOD = 61 V; VFB = 0.8 V 0.1 µA Thermal shutdown TSHDWN Thermal shutdown temperature (3) 170 °C THYS Thermal shutdown hysteresis (3) 15 °C 1. Specifications referred to TJ from -40 to +125 °C. Specifications in the -40 to +125 °C temperature range are assured by design, characterization and statistical correlation. 2. Parameter tested in static condition during testing phase. Parameter value may change over dynamic application condition. 3. Not tested in production. Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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