ST1S14 datasheet(8/46 Pages) STMICROELECTRONICS

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Electrical characteristics

ST1S14

8/46

DocID17977 Rev 2

Electrical characteristics

All the population tested at TJ = 25 °C, VCC =12 V, VEN1 = 0 V, VEN2 = VCC unless otherwise

specified.

The specification is guaranteed from (-40 to +125 °C) TJ temperature range by design,

characterization, and statistical correlation.

Table 6. Electrical characteristics

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VIN

Operating input

voltage range

5.5

RDS(on)

MOSFET on

resistance

ISW=1 A

0.2

0.4

ISW

Maximum limiting

current

3.7

4.5

5.2

tHICCUP Hiccup time

fSW

Switching frequency

600

850

1000

kHz

Duty cycle

(1)

TON MIN

Minimum conduction

time of the power

element

(1)

TOFF MIN

Minimum conduction

time of the external

diode

(1)

120

DC characteristics

VFB

Voltage feedback

ILOAD=0 A

1.202

1.22

1.239

ILOAD=10 mA to 3 A

1.196

1.22

1.245

IFB

FB biasing current

Quiescent current

VFB=2 V

1.3

VFB=2 V, VIN=48 V

1.7

2.4

Iqst-by

Standby quiescent

current

Device OFF (see Table 2)16

μA

Power good threshold

VFB rising edge

0.92*

VOUT

VFB falling edge

0.8*

VOUT

PG output voltage

(open collector active)

ISINK=6 mA

0.4

Inhibit

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