STCC2540 datasheet(8/32 Pages) STMICROELECTRONICS

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Electrical characteristics

STCC2540

8/32

DocID024711 Rev 6

IOL(FAULT)

FAULT output leakage

current

VIN = 5.5 V, VFAULT = 5 V

µA

tFAULT

FAULT output deglitch delay

FAULT assertion / deassertion

delay in overcurrent condition

VUVLO

Undervoltage lockout

VIN rising

3.9

4.1

4.3

VHYST(UVLO)

Undervoltage lockout

hysteresis

TJ = 25 °C

100

Power switch - AC parameters(1)

tON

Turn on, EN to OUT delay

CLOAD = 1 µF, RLOAD = 100 Ω

0.8

tOFF

Turn off, EN to OUT delay

0.3

OUT (VBUS) rise time

CLOAD = 1 µF, RLOAD = 100 Ω

0.4

OUT (VBUS) fall time

0.2

tIOS

Current limiter response

time to short-circuit

VIN = 5.5 V

3.5

µs

Output discharge

RDISCHARGE

Discharge resistor

140

200

300

High-speed data switch - DC parameters

RON

Data switch on-resistance

Switch closed, VIN = 5 V,

IS = 8 mA, test voltage on

DP_OUT, DM_OUT = 0.4 V

2.5

RON

Data switch on-resistance

Switch closed, VIN = 5 V,

IS = 8 mA, test voltage on

DP_OUT, DM_OUT = 3 V

2.7

IOFF

OFF state leakage current

VEN = 0 V, VDP/DM_IN = 3.6 V,

VDP/DM_OUT = 0 V, measure

IDP/DM_OUT

1.5

µA

High-speed data switch - AC parameters(1)

XTALK

DP, DM crosstalk

RTERM = 50 Ω, CLOAD = 5 pF,

VS = 1 Vrms, signal = 0 dBm,

f = 250 MHz

OIRR

OFF state isolation

RTERM = 50 Ω, CLOAD = 5 pF,

VS = 1 Vrms, signal = 0 dBm,

f = 250 MHz

Bandwidth -3 dB

RTERM = 50 Ω, CLOAD = 5 pF,

signal = 0 dBm

1100

MHz

Charger emulator - BC1.2 DCP mode

RDCP_RES

DP_IN to DM_IN short

resistance

CTLx configured for DCP

BC1.2

100

170

Table 4. Electrical characteristics VIN = 4.5 to 5.5 V, -40 °C < TJ < 125 °C

(unless otherwise specified) (continued)

Symbol

Parameter

Conditions

Min. Typ. Max.

Unit

STCC2540 数据表(PDF) 8 Page - STMicroelectronics

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