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PM6675 数据表(PDF) 39 Page - STMicroelectronics

部件名 PM6675
功能描述  Very fast load transient response using constant on-time control loop
PDF  47 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PM6675 数据表(HTML) 39 Page - STMicroelectronics

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Application information
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Dual N-MOS can be used in applications with lower output current.
Table 14
shows some suitable dual MOSFETs for applications requiring about 3A.
7.1.5
Diode selection
A rectifier across the synchronous switch is recommended. The rectifier works as a voltage
clamp across the synchronous rectifier and reduces the negative inductor swing during the
dead time between turning the high-side MOSFET off and the synchronous rectifier on.
Moreover it increases the efficiency of the system.
Choose a schottky diode as long as its forward voltage drop is very little (0.3V). The reverse
voltage should be greater than the maximum input voltage VINmax and a minimum recovery
reverse charge is preferable. Table 15 shows some evaluated diodes.
Table 13. Evaluated low-side MOSFETs
Manufacturer
Type
RDS(on) (mΩ)
CGD \ CGS
Rated reverse voltage (V)
ST
STS12NH3LL
13.5
0.069
30
ST
STS25NH3LL
40
0.011
30
IR
IRF7811
24
0.054
30
Table 14. Suitable dual MOSFETs
Manufacturer
Type
RDSon (mΩ)
Gate Charge (nC)
Rated reverse voltage (V)
ST
STS8DNH3LL
25
10
30
IR
IRF7313
46
33
30
Table 15. Evaluated recirculation rectifiers
Manufacturer
Type
Forward
voltage (V)
Rated reverse
voltage (V)
Reverse current (
µA)
ST
STPS1L30M
0.34
30
0.00039
ST
STPS1L30A
0.34
30
0.00039



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