LQFP100 datasheet(69/116 Pages) STMICROELECTRONICS

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DocID14619 Rev 13

69/116

SPC560B40x/50x, SPC560C40x/50x

Package pinouts and signal descriptions

115

3.19.2

Flash power supply DC characteristics

Table 32 shows the power supply DC characteristics on external supply.

Table 31. Flash read access timing

Symbol

Parameter

Conditions(1)

VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified

Max

Unit

fREAD

Maximum frequency for Flash reading

2 wait states

MHz

1 wait state

0 wait states

Table 32. Flash memory power supply DC electrical characteristics

Symbol

Parameter

Conditions(1)

Value

Unit

Min

Typ

Max

IFREAD

(2)

CC D

Sum of the current consumption on

VDD_HV and VDD_BV on read

access

Code flash memory module read



fCPU = 64 MHz

(3)

—15

Data flash memory module read



fCPU = 64 MHz

(3)

—15

IFMOD

(2) CC D

Sum of the current consumption on

VDD_HV and VDD_BV on matrix

modification (program/erase)

Program/Erase ongoing while

reading code flash memory

registers fCPU = 64 MHz

(3)

—15

Program/Erase ongoing while

reading data flash memory

registers fCPU = 64 MHz

(3)

—15

IFLPW CC D

Sum of the current consumption on

VDD_HV and VDD_BV

During code flash memory low-

power mode

——

900

µA

During data flash memory low-

power mode

——

900

IFPWD CC D

Sum of the current consumption on

VDD_HV and VDD_BV

During code flash memory

power-down mode

——

150

µA

During data flash memory power-

down mode

——

150

VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified

This value is only relative to the actual duration of the read cycle

fCPU 64 MHz can be achieved only at up to 105 °C

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