MDF9N60BTH datasheet(3/6 Pages) MGCHIP

3 / 6 page

Jan. 2012 Version 1.0

MagnaChip Semiconductor Ltd

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

Notes :

※

1. V

GS = 0 V

2. I

= 250㎂

J, Junction Temperature [

oC]

0.6

0.8

1.0

GS=10.0V

GS=20V

D,Drain Current [A]

0.1

-55℃

25℃

150℃

* Notes ;

1. Vds=30V

GS [V]

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

25℃

150℃

Notes :

※

1. V

GS = 0 V

2.250µs Pulse test

SD, Source-Drain Voltage [V]

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

※

1. V

GS = 10 V

2. I

= 4.5A

J, Junction Temperature [

oC]

Notes

1. 250㎲

㎲

㎲ PulseTest

2. T

C=25

℃

gs=5.0V

=5.5V

=6.0V

=6.5V

=7.0V

=10.0V

=15.0V

DS,Drain-Source Voltage [V]

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