MDF9N60BTH datasheet(4/6 Pages) MGCHIP

4 / 6 page

Jan. 2012 Version 1.0

MagnaChip Semiconductor Ltd

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area

120V

300V

480V

Note : I

※

D = 9.0A

G, Total Gate Charge [nC]

Fig.12 Maximum Drain Current vs. Case

Temperature

Fig.10 Transient Thermal Response Curve

Fig.11 Single Pulse Maximum Power

Dissipation

-5

-4

-3

-2

-1

-2

-1

Notes :

※

Duty Factor, D=t

1/t2

PEAK T

J = PDM * Zθ JC* Rθ JC

(t) + T

Θ JC

=2.62 /W

℃

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

1, Rectangular Pulse Duration [sec]

100

125

150

C, Case Temperature [

]

℃

500

1000

1500

2000

2500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Notes ;

※

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

-1

-2

-1

10 µs

100 µs

100 ms

10 ms

1 ms

Operation in This Area

is Limited by R

DS(on)

Single Pulse

J=Max rated

C=25

℃

DS, Drain-Source Voltage [V]

1E-5

1E-4

1E-3

0.01

0.1

2000

4000

6000

8000

10000

12000

14000

16000

single Pulse

thJC = 2.62

℃

C = 25

℃

Pulse Width (s)

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