MDF3752TH datasheet(2/6 Pages) MGCHIP

2 / 6 page

April 2015. Version 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF3752TH

-55~150

TO-220F

Tube

Halogen Free

Electrical Characteristics (TJ =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = -250μA, VGS = 0V

-40

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250μA

-1.0

-2.0

-3.0

Zero Gate Voltage Drain Current

IDSS

VDS = -32V, VGS = 0V

-1

μA

Gate Leakage Current

IGSS

VGS = ±20V, VDS = 0V

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = -10V, ID = -20A

mΩ

VGS = -4.5V, ID = -10A

Forward Transconductance

gFS

VDS = -10V, ID = -20A

Dynamic Characteristics

Total Gate Charge

VDD = -20V, ID = -20A,

VGS = -10V

44.1

Gate-Source Charge

Qgs

8.6

Gate-Drain Charge

Qgd

9.3

Input Capacitance

Ciss

VDS = -20V, VGS = 0V,

f = 1.0MHz

2088

Reverse Transfer Capacitance

Crss

168

Output Capacitance

Coss

290

Turn-On Delay Time

td(on)

VGS = -10V ,VDD = -20V,

ID = -1A, RGEN=6.0Ω

17.6

Turn-On Rise Time

17.8

Turn-Off Delay Time

td(off)

59.0

Turn-Off Fall Time

19.8

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = -20A, VGS = 0V

1.2

Reverse Recovery Time

trr

IS = -20A, di/dt=100A/us

Reverse Recovery Charge

Qrr

Note :

PD is based on TJ(MAX)=150

OC, P

D(TC=25

OC) is based on Rθ

JC.

Starting TJ=25°C, L=1mH, IAS=-16A VDD=-20V, VGS=-10V

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