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MDF3752TH 数据表(PDF) 3 Page - MagnaChip Semiconductor.

部件名 MDF3752TH
功能描述  P-Channel Trench MOSFET, -40V, -36.5A, 17m(ohm)
PDF  6 Pages
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制造商  MGCHIP [MagnaChip Semiconductor.]
网页  http://www.magnachip.co.kr
标志 MGCHIP - MagnaChip Semiconductor.

MDF3752TH 数据表(HTML) 3 Page - MagnaChip Semiconductor.

  MDF3752TH Datasheet HTML 1Page - MagnaChip Semiconductor. MDF3752TH Datasheet HTML 2Page - MagnaChip Semiconductor. MDF3752TH Datasheet HTML 3Page - MagnaChip Semiconductor. MDF3752TH Datasheet HTML 4Page - MagnaChip Semiconductor. MDF3752TH Datasheet HTML 5Page - MagnaChip Semiconductor. MDF3752TH Datasheet HTML 6Page - MagnaChip Semiconductor.  
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April 2015. Version 1.1
MagnaChip Semiconductor Ltd.
3
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
V
GS = -10V
-4.5V
-8V
-4.0V
-3.0V
-V
DS, Drain-Source Voltage [V]
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
4
8
12
16
20
-V
GS, Gate-Source Voltage [V]
T
A=25
℃
※ Notes :
V
DS = -10V
2
4
6
8
10
0
20
40
60
80
100
120
T
A = 25
℃
V
GS, Gate to Source Volatge [V]
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
0
10
1
10
2
T
A=125
℃
※ Notes :
V
GS = 0V
25
℃
-V
SD, Source-Drain voltage [V]
0
20
40
60
80
100
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
GS = -10V
-8V
-6V
-5V
-4.5V
-4V
V
GS = -3.5V
-I
D, Drain Current [A]
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
※ Notes :
1. V
GS = -10 V
2. I
D = -20 A
T
J, Junction Temperature [
oC]



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