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K4M56163PE-R 数据表(PDF) 8 Page - Samsung semiconductor |
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K4M56163PE-R 数据表(HTML) 8 Page - Samsung semiconductor |
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8 / 12 page ![]() K4M56163PE - R(B)G/F February 2004 Mobile-SDRAM AC CHARACTERISTICS(AC operating conditions unless otherwise noted) NOTES : 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Parameter Symbol -90 -1L Unit Note Min Max Min Max CLK cycle time CAS latency=3 tCC 9.0 1000 9.5 1000 ns 1 CLK cycle time CAS latency=2 tCC 12 15 CLK cycle time CAS latency=1 tCC - 25 CLK to valid output delay CAS latency=3 tSAC 7 7 ns 1,2 CLK to valid output delay CAS latency=2 tSAC 9 10 CLK to valid output delay CAS latency=1 tSAC - 20 Output data hold time CAS latency=3 tOH 2.5 2.5 ns 2 Output data hold time CAS latency=2 tOH 2.5 2.5 Output data hold time CAS latency=1 tOH 2.5 2.5 CLK high pulse width tCH 3.0 3.0 ns 3 CLK low pulse width tCL 3.0 3.0 ns 3 Input setup time tSS 2.0 2.0 ns 3 Input hold time tSH 1.0 1.5 ns 3 CLK to output in Low-Z tSLZ 1 1 ns 2 CLK to output in Hi-Z CAS latency=3 tSHZ 7 7 ns CAS latency=2 9 10 CAS latency=1 - 20 |
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