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M24512-R 数据表(PDF) 22 Page - STMicroelectronics |
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M24512-R 数据表(HTML) 22 Page - STMicroelectronics |
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22 / 37 page ![]() DC and AC parameters M24512-x, M24256-Bx 22/37 Table 12. Input parameters Symbol Parameter(1) 1. Sampled only, not 100% tested. Test condition Min. Max. Unit CIN Input capacitance (SDA) 8 pF CIN Input capacitance (other pins) 6 pF ZL (2) 2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition). Input impedance (E2, E1, E0, WC) VIN < 0.3VCC 30 k Ω ZH (2) Input impedance (E2, E1, E0, WC) VIN > 0.7VCC 500 k Ω Table 13. DC characteristics (M24xxx-W) Symbol Parameter Test conditions (see Table 8 and Table 11) Min. Max. Unit ILI Input leakage current (SCL, SDA, E0, E1, E2) VIN = VSS or VCC device in Standby mode ± 2 µA ILO Output leakage current SDA in Hi-Z, external voltage applied on SDA: VSS or VCC ± 2 µA ICC Supply current (Read) VCC = 2.5 V, fc = 400 kHz (rise/fall time < 50 ns) 1mA VCC = 5.5 V, fc = 400 kHz (rise/fall time < 50 ns) 2mA ICC0 Supply current (Write) During tW, 2.5 V < VCC < 5.5 V 5(1) 1. Characterized value, not tested in production. mA ICC1 Standby supply current Device not selected(2), VIN = VSS or VCC, VCC = 2.5 V 2. The device is not selected after power-up, after a READ command (after the Stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a WRITE command). Device grade 3 5 µA Device grade 6 2 VIN = VSS or VCC, VCC = 5.5 V 5 µA VIL Input low voltage (SCL, SDA, WC) –0.45 0.3VCC V VIH Input high voltage (SCL, SDA, WC) 0.7VCC VCC+0.6 V VOL Output low voltage IOL = 2.1 mA, VCC = 2.5 V 0.4 V |
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