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AS6C2016 数据表(PDF) 4 Page - Alliance Semiconductor Corporation

部件名 AS6C2016
功能描述  Fully static operation
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS6C2016 数据表(HTML) 4 Page - Alliance Semiconductor Corporation

  AS6C2016 Datasheet HTML 1Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 2Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 3Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 4Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 5Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 6Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 7Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 8Page - Alliance Semiconductor Corporation AS6C2016 Datasheet HTML 9Page - Alliance Semiconductor Corporation Next Button
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TRUTH TABLE
I/O OPERATION
MODE
CE# OE#
WE# LB#
UB#
DQ0-DQ7
DQ8-DQ15
SUPPLY CURRENT
Standby
H
X
X
X
X
X
X
H
X
H
High – Z
High – Z
High – Z
High – Z
ISB1
Output Disable
L
L
H
H
H
H
L
X
X
L
High – Z
High – Z
High – Z
High – Z
ICC,ICC1
Read
L
L
L
L
L
L
H
H
H
L
H
L
H
L
L
DOUT
High – Z
DOUT
High – Z
DOUT
DOUT
ICC,ICC1
Write
L
L
L
X
X
X
L
L
L
L
H
L
H
L
L
DIN
High – Z
DIN
High – Z
DIN
DIN
ICC,ICC1
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
*4
MAX.
UNIT
Supply Voltage
VCC
2.7
3.0
5.5
V
Input High Voltage
VIH
*1
2.4
-
VCC+0.3
V
Input Low Voltage
VIL
*2
- 0.2
-
0.6
V
Input Leakage Current
ILI
VCC
VIN
VSS
- 1
-
1
µA
Output Leakage
Current
ILO
VCC
VOUT
VSS,
Output Disabled
- 1
-
1
µA
Output High Voltage
VOH
IOH = -1mA
2.4
2.7
-
V
Output Low Voltage
VOL
IOL = 2mA
-
-
0.4
V
- 55
-
20
60
mA
ICC
Cycle time = Min., II/O = 0mA
CE# =0.2V,
Others at 0.2V or VCC-0.2V
Average Operating
Power supply Current
ICC1
Cycle time = 1µs
CE# = 0.2V , II/O = 0mA
Other pins at 0.2V or VCC - 0.2V
-
4
10
mA
Standby Power
Supply Current
ISB1
CE#
VCC - 0.2V
Others at 0.2V or VCC - 0.2V
-
2
50
µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25 C
CAPACITANCE (TA = 25 , f = 1.0MHz)
PARAMETER
SYMBOL
MIN.
MAX
UNIT
Input Capacitance
CIN
-
6
pF
Input/Output Capacitance
CI/O
-
8
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
512K X 8 BIT LOW POWER CMOS SRAM
January 2007
128K X 16 BIT LOW POWER CMOS SRAM
FEBRUARY 2008
AS6C2016
FEBRUARY/2008, V 1.c
Alliance Memory Inc.
Page 4 of 13
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