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AS21P2THB 数据表(PDF) 8 Page - STMicroelectronics

部件名 AS21P2THB
功能描述  Low voltage high bandwidth dual single-pole double-throw analog switch
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

AS21P2THB 数据表(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
AS21P2THB
8/23
DocID026023 Rev 1
∆RON
ON resistance match
between channels(1)
1.8
VS at RON max
IS = 8 mA
––
2.7
3.0
0.1
3.7
4.3
RFLAT
ON resistance
flatness(2)
1.8
VS = 0 V to 0.4 V
IS = 8 mA
–4.5
1.8
VS = 0 V to VCC
IS = 8 mA
–9.0
2.7
2.2
3.0
1.8
3.7
1.6
4.3
1.6
IOFF
OFF state leakage
current (Sn), (D)
4.3
VS = 0.3 or 4 V
-20
20
-100
100
nA
IIN
Input leakage current
0 to 4.3
VSEL = 0 to 4.3 V
-0.2
0.2
-1.0
1.0
µ
A
ICC
Quiescent supply
current
1.65 to 4.3
VSEL = VCC or
GND
-0.2
0.2
-1.0
1.0
µ
A
ICCLV
Quiescent supply
current for low voltage
driving
4.3
VSEL = 1.65 V
±37
±50
±100
µ
A
VSEL = 1.80 V
±33
±40
±50
VSEL = 2.60 V
±11
±20
±30
1.
RON = max |mSN-nSN|, where m = 1, 2 and n = 1, 2, N = 1, 2
2. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the
specified analog signal ranges.
Table 6. DC specifications (continued)
Symbol
Parameter
VCC (V)
Test condition
Value
Unit
TA =25°C
-40 to 85 °C
Min
Typ
Max
Min
Max



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