| 数据搜索系统,热门电子元器件搜索 |
|
AS21P2THB 数据表(PDF) 1 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AS21P2THB 数据表(HTML) 1 Page - STMicroelectronics |
|
1 / 23 page ![]() This is information on a product in full production. March 2014 DocID026023 Rev 1 1/23 AS21P2THB Low voltage high bandwidth dual single-pole double-throw analog switch Datasheet - production data Features Ultra low power dissipation: –ICC = 1 A (max.) at TA = 85 °C Low “ON” resistance: –RON = 4.8 (TA = 25 °C) at VCC = 4.3 V –RON = 5.9 (TA = 25 °C) at VCC = 3.0 V Wide operating voltage range: –VCC (opr.) = 1.65 V to 4.3 V 4.3 V tolerant and 1.8 V compatible threshold on digital control input at VCC = 2.3 V to 3.0 V Typical bandwidth (-3 dB) at 800 MHz on all channels USB (2.0) high speed (480 Mbps) signal switching compliant Integrated fail safe function Interrupt function to indicate to the processor that the device is in dedicated port charging mode Latch-up performance exceeds 500 mA per JESD 78, Class II ESD performance exceeds JESD22: – Dn pins: 4000-V human body model (A114- A) – All other pins: 2000-V human body model (A114-A) Applications Wearable Sport and fitness Portable equipment Description The AS21P2THB is a high-speed CMOS low voltage dual analog SPDT (single pole double throw) switch or 2:1 multiplexer/demultiplexer switch fabricated in silicon gate C²MOS technology. It is designed to operate from 1.65 V to 4.3 V, thus making this device the ideal selection for portable applications. The SEL input is provided to control the switch. The switch nS1 is ON (connected to common ports Dn) when the SEL input is held high and OFF (high impedance state exists between the two ports) when SEL is held low, the switch nS2 is ON (it is connected to common port Dn) when the SEL input is held low and OFF (high impedance state exists between the two ports) when SEL is held high. AS21P2THB has an integrated fail safe function to withstand over-voltage condition when the device is powered off. The AS21P2THB also has an interrupt pin which sends a signal to the processor when the device is in dedicated port charging mode. Additional key features are fast switching speed, break-before- make-delay time and ultralow power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage. QFN10 (1.8 x 1.4 mm) Table 1. Device summary Order code Package Packaging AS21P2THB QFN10 (1.8 x 1.4 mm) Tape and reel www.st.com |
类似零件编号 - AS21P2THB |
|
类似说明 - AS21P2THB |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |