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RN1908 数据表(PDF) 1 Page - Toshiba Semiconductor |
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RN1908 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() RN1907~RN1909 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2907~RN2909 Equivalent Circuit and Bias Resistor Values Equivalent Circuit (Top View) Maximum Ratings (Ta = 25 °°°°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1907~1909 VCEO 50 V RN1907 6 RN1908 7 Emitter-base voltage RN1909 VEBO 15 V Collector current IC 100 mA Collector power dissipation PC* 200 mW Junction temperature Tj 150 °C Storage temperature range RN1907~1909 Tstg −55~150 °C *: Total rating JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg Type No. R1 (kΩ)R2 (kΩ) RN1907 10 47 RN1908 22 47 RN1909 47 22 Unit: mm |
类似零件编号 - RN1908 |
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类似说明 - RN1908 |
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