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RN1908 数据表(PDF) 1 Page - Toshiba Semiconductor

部件名 RN1908
功能描述  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
PDF  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

RN1908 数据表(HTML) 1 Page - Toshiba Semiconductor

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RN1907~RN1909
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2907~RN2909
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25
°°°°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
RN1907~1909
VCEO
50
V
RN1907
6
RN1908
7
Emitter-base voltage
RN1909
VEBO
15
V
Collector current
IC
100
mA
Collector power dissipation
PC*
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
RN1907~1909
Tstg
−55~150
°C
*: Total rating
JEDEC
―
EIAJ
―
TOSHIBA
2-2J1A
Weight: 6.8mg
Type No.
R1 (kΩ)R2 (kΩ)
RN1907
10
47
RN1908
22
47
RN1909
47
22
Unit: mm


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