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RN1908 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 RN1908
功能描述  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
PDF  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

RN1908 数据表(HTML) 2 Page - Toshiba Semiconductor

  RN1908 Datasheet HTML 1Page - Toshiba Semiconductor RN1908 Datasheet HTML 2Page - Toshiba Semiconductor RN1908 Datasheet HTML 3Page - Toshiba Semiconductor RN1908 Datasheet HTML 4Page - Toshiba Semiconductor RN1908 Datasheet HTML 5Page - Toshiba Semiconductor RN1908 Datasheet HTML 6Page - Toshiba Semiconductor  
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RN1907~RN1909
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = 50V, IE = 0
―
―
100
nA
Collector cut-off current
RN1907~1909
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
RN1907
―
VEB = 6V, IC = 0
0.081
―
0.15
RN1908
―
VEB = 7V, IC = 0
0.078
―
0.145
Emitter cut-off current
RN1909
IEBO
―
VEB = 15V, IC = 0
0.167
―
0.311
mA
RN1907
―
80
―
―
RN1908
―
80
―
―
DC current gain
RN1909
hFE
―
VCE = 5V, IC = 10mA
70
―
―
―
Collector-emitter
saturation voltage
RN1907~1909
VCE (sat)
―
IC = 5mA, IB = 0.25mA
―
0.1
0.3
V
RN1907
―
0.7
―
1.8
RN1908
―
1.0
―
2.6
Input voltage (ON)
RN1909
VI (ON)
―
VCE = 0.2V, IC = 5mA
2.2
―
5.8
V
RN1907
―
0.5
―
1.0
RN1908
―
0.6
―
1.16
Input voltage (OFF)
RN1909
VI (OFF)
―
VCE = 5V, IC = 0.1mA
1.5
―
2.6
V
Translation frequency
RN1907~1909
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector output capacitance RN1907~1909
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
3
6
pF
RN1907
―
7
10
13
RN1908
―
15.4
22
28.6
Input resistor
RN1909
R1
―
―
32.9
47
61.1
kΩ
RN1907
―
0.191
0.213
0.232
RN1908
―
0.421
0.468
0.515
Resistor ratio
RN1909
R1/R2
―
―
1.92
2.14
2.35
―



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