STTH30R04G datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

STTH30R04

2/10

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.9 x IF(AV) + 0.01 x IF

(RMS)

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC / DO-247 / D2PAK

1.15

°C/W

DOP3I

1.9

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

Pulse test: tp = 5 ms, δ < 2 %

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 100° C

Tj = 125° C

150

(2)

Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

Tj = 25° C

IF = 15 A

1.26

Tj = 150° C

0.8

1.0

Tj = 25° C

IF = 30 A

1.45

Tj = 100° C

1.3

Tj = 150° C

0.97

1.2

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -200 A/µs,

VR = 30 V, Tj = 25° C

IF = 1 A, dIF/dt = -15 A/µs,

VR = 30 V, Tj = 25° C

100

IF = 1 A, IR = 1 A,

IRR = 0.25 A, Tj = 25° C

IRM

Reverse recovery current

IF = 30 A, dIF/dt = -200 A/µs,

VR = 160 V, Tj = 125° C

tfr

Forward recovery time

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

500

VFP

Forward recovery voltage

IF = 30 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

2.9

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