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STTH30R04G 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH30R04G
功能描述  Low reverse current
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH30R04G 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH30R04
4/10
Figure 7.
Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, eCU = 35 µm)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
Rth
(j a)(°C/W)
D²PAK
SCU(cm²)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
I
RM
Q
RR
I
F= 30 A
V
R=320 V
Tj(°C)
Q
[T ]/Q
[T = 125° C] and I
RR
j
RR
j
RM
j
RM
j
[T ]/I
[T = 125° C]
Figure 9.
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10.
Forward recovery time versus dIF/dt
(typical values)
Figure 11.
Junction capacitance versus
reverse voltage applied (typical
values)
0
1
1
2
2
3
3
4
4
5
5
0
50
100
150
200
250
300
350
400
450
500
V
Fp(V)
I
F=30 A
T
j=125 °C
dIF/dt(A/µs)
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
100
200
300
400
500
t
FR(ns)
I
F=30 A
V
FR=1.1 x VF max.
T
j=125°C
dIF/dt(A/µs)
10
100
1000
1
10
100
1000
C(pF)
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)



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