STTH30R04PI datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STTH30R04PI

功能描述	Low reverse current

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 10 page

March 2007

Rev 1

1/10

STTH30R04

Ultrafast recovery diode

Main product characteristics

Features and benefits

■ Ultrafast switching

■ Low reverse current

■ Low thermal resistance

■ Reduces switching and conduction losses

■ High junction temperature

■ Insulated package: DOP3I

– Electrical insulation = 2500 VRMS

Package capacitance = 12 pF

Description

The compromise-free, high quality design of this

diode has produced a device with low leakage

current, regularly reproducible characteristics and

intrinsic ruggedness. These characteristics make

it ideal for heavy duty applications that demand

long term reliability.

Note: D2PAK - 2 anode terminals must be shorted on

board.

Order codes

IF(AV)

30 A

VRRM

400 V

Tj

175° C

VF (typ)

0.97 V

trr

24 ns

Part Number

Marking

STTH30R04D

STTH30R04G

STTH30R04G-TR

STTH30R04G

STTH30R04W

STTH30R04PI

K

A

K

A

K

A

K

A

K

A

K

AA

TO-220AC

STTH30R04D

DO-247

STTH30R04W

D2PAK

STTH30R04G

DOP3I

STTH30R04PI

Table 1.

Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

400

V

IF(RMS)

RMS forward current

50

A

IF(AV)

Average forward current,

δ = 0.5

TO-220AC / DO-247 / D2PAK Tc = 120° C

30

A

DOP3I

Tc = 90° C

IFRM

Repetitive peak forward current

tp = 10 µs, F = 1 kHz

500

A

IFSM

Surge non repetitive forward current tp = 10 ms Sinusoidal

300

A

Tstg

Storage temperature range

-65 to +175

° C

Tj

Maximum operating junction temperature range

-40 to +175

° C

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