STTH30R04PI datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

STTH30R04

Characteristics

3/10

Figure 1.

Conduction losses versus

average current

Figure 2.

Forward voltage drop versus

forward current

P(W)

δ=0 05

δ=0 1

δ=0 2

δ=0 5

δ=1

δ=tp/T

IF(AV)(A)

100

120

140

160

180

200

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

FM(A)

J=150°C

(Maximum values)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

J=25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 4.

Peak reverse recovery current

versus dIF/dt (typical values)

0.1

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Zth

(j c)/Rth(j c)

Single pulse

TO-220AC

D²PAK

DO-247

DOP-3I

tp(s)

100

1000

RM(A)

F= 30 A

R=320 V

j=125° C

j=25° C

dIF/dt(A/µs)

Figure 5.

Reverse recovery time versus

dIF/dt (typical values)

Figure 6.

Reverse recovery charges versus

dIF/dt (typical values)

100

120

140

160

180

100

1000

RR(ns)

F= 30 A

R=320 V

j=125° C

j=25° C

dIF/dt(A/µs)

100

150

200

250

300

350

400

450

500

550

600

650

700

750

100

1000

RR(nC)

F= 30 A

R=320 V

j=125° C

j=25° C

dIF/dt(A/µs)

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