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SMM4F10A 数据表(PDF) 4 Page - STMicroelectronics

部件名 SMM4F10A
功能描述  Unidirectional type
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SMM4F10A 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
SMM4FxxA
4/12
DocID14250 Rev 4
1.1
Characteristics (curves)
Figure 3: Peak power dissipation versus initial
junction temperature
Figure 4: Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C)
Figure 5: Clamping voltage versus peak pulse
current (exponential waveform, maximum values)
Figure 6: Junction capacitance versus reverse
applied voltage
Figure 7: Peak forward voltage drop versus peak
forward current
Figure 8: Relative variation of thermal impedance
junction to ambient versus pulse duration (printed
circuit board FR4, SCu = 1 cm2)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
175
200
T
(°C)
j initial
PPP[Tj initial] / PPP[Tj initial = 25 °C]
0.1
1.0
10.0
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
T
j initial = 25 °C
t (ms)
p
P
(kW)
PP
0.1
1
10
100
1000
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
IPP (A)
VCL (V)
Tj initial = 25 °C
tp = 8/20 µs
tp = 10/1000 µs
SMM4F5.0A
SMM4F15A
SMM4F24A
SMM4F33A
10
100
1000
10000
1
10
100
F = 1 MHz
V
OSC = 30 mVRMS
T
j = 25 °C
SMM4F5.0A
SMM4F15A
SMM4F24A
SMM4F33A
C(pF)
V (V)
R
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
j = 25 °C
T
j = 125 °C
I
(A)
FM
V
(V)
FM
0.00
0.01
0.10
1.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
On recommended pad
layout
Zth(j-a) /Rth(j-a)
t (S)
p



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