TS882 datasheet(5/26 Pages) STMICROELECTRONICS

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DocID024119 Rev 3

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TS882, TS884

Electrical characteristics

Table 4. VCC = +1.2 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified)

(1)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VIO

Input offset voltage(2)

Tamb = +25 °C

-40 °C < Tamb < +125 °C

-6

∆V

Input offset voltage drift

-40 °C < Tamb < +125 °C

µV/°C

VHYST

Input hysteresis voltage(3)

Tamb = +25 °C

-40 °C < Tamb < +125 °C

1.5

2.4

4.2

IIO

Input offset current(4)

Tamb = +25 °C

-40 °C < Tamb < +125 °C

100

IIB

Input bias current(4)

Tamb = +25 °C

-40 °C < Tamb < +125 °C

100

ICC

Supply current per operator

No load, output low, VID = -0.1 V

-40 °C < Tamb < +125 °C

No load, output high, VID = +0.1 V

-40 °C < Tamb < +125 °C

300

220

450

350

ISC

Short-circuit current

Source

Sink

1.0

1.7

VOH

Output voltage high

Isource = 0.2 mA

-40 °C < Tamb < +85 °C

-40 °C < Tamb < +125 °C

1.13

1.10

1.00

1.15

VOL

Output voltage low

Isink = 0.2 mA

-40 °C < Tamb < +85 °C

-40 °C < Tamb < +125 °C

CMRR

Common mode rejection ratio

0 < VICM < VCC

-40 °C < Tamb < +125 °C

TPLH

Propagation delay

(low to high)

f = 1 kHz, CL = 30 pF, RL = 1 MΩ

Overdrive = 10 mV

-40 °C < Tamb < +125 °C

Overdrive = 100 mV

-40 °C < Tamb < +125 °C

5.5

2.1

3.1

3.4

µs

TPHL

Propagation delay

(high to low)

f = 1 kHz, CL = 30 pF, RL = 1 MΩ

Overdrive = 10 mV

-40 °C < Tamb < +125 °C

Overdrive = 100 mV

-40 °C < Tamb < +125 °C

5.1

1.9

2.6

3.1

µs

Rise time (10% to 90%)

CL = 30 pF, RL = 1 MΩ

100

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