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Oct. 2015. Rev. 2.0

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SW13N50D

N-channel Enhancement mode TO-220F MOSFET

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain to Source Voltage

500

V

13*

A

8.2*

A

Drain current pulsed

(note 1)

52

A

Gate to Source Voltage

±30

V

Single pulsed Avalanche Energy

(note 2)

408

mJ

Repetitive Avalanche Energy

(note 1)

35

mJ

dv/dt

Peak diode Recovery dv/dt

(note 3)

5

V/ns

43

W

0.34

Operating Junction Temperature & Storage Temperature

-55 ~ + 150

Maximum Lead Temperature for soldering

purpose, 1/8 from Case for 5 seconds.

300

Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance, Junction to case

2.9

Thermal resistance, Case to Sink

0.5

Thermal resistance, Junction to ambient

55

*. Drain current is limited by junction temperature.

BV

I

D

: 13A

R

Ω

1. Gate 2. Drain 3. Source

1

2

3

2 3

TO-220F

Item

Sales Type

Marking

Package

Packaging

1

SW F 13N50D

SW13N50D

TO-220F

TUBE

Order Codes

Features

 High ruggedness

 R

 Gate Charge (Typ 47nC)

 Improved dv/dt Capability

 100% Avalanche Tested

 Application:LED,Charger

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable power MOSFET to have better characteristics, such as fast

switching time, low on resistance, low gate charge and especially excellent avalanche

characteristics.

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