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SW13N50D 数据表(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

部件名 SW13N50D
功能描述  N-channel Enhancement mode TO-220F MOSFET
PDF  6 Pages
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制造商  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
网页  http://www.samwinsemi.com
标志 SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW13N50D 数据表(HTML) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
2/6
Electrical characteristic ( T
C = 25
oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
500
V
ΔBV
DSS
/ ΔT
J
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
0.51
V/oC
IDSS
Drain to source leakage current
VDS=500V, VGS=0V
1
uA
VDS=400V, TC=125oC
50
uA
IGSS
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.5
4.5
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID =6.5A
0.46
0.52
Ω
Gfs
Forward Transconductance
VDS = 30V, ID = 6.5A
11
S
Dynamic characteristics
Ciss
Input capacitance
VGS=0V, VDS=25V, f=1MHz
1886
pF
Coss
Output capacitance
189
Crss
Reverse transfer capacitance
30
td(on)
Turn on delay time
VDS=250V, ID=13A, RG=25Ω
(note 4
，5)
23
nS
tr
Rising time
54
td(off)
Turn off delay time
112
tf
Fall time
51
Qg
Total gate charge
VDS=400V, VGS=10V, ID=13A
(note 4
，5)
47
nC
Qgs
Gate-source charge
10
Qgd
Gate-drain charge
20
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IS
Continuous source current
Integral reverse p-n Junction
diode in the MOSFET
13
A
ISM
Pulsed source current
52
A
VSD
Diode forward voltage drop.
IS=13A, VGS=0V
1.4
V
Trr
Reverse recovery time
IS=13A, VGS=0V,
dIF/dt=100A/us
360
nS
Qrr
Breakdown voltage charge
5.1
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L =4.8mH, IAS = 13A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 13A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
SW13N50D



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